An application of cesium-xenon co-sputtering

Quantitative study of a Pd-Rh thin film by ToF-SIMS

Research output: Contribution to journalArticle

Abstract

In this work, the ionization processes and the formation mechanisms of monoatomic and molecular ions were studied by co-sputtering cesium and xenon on a RhPd layer. Firstly, the relative concentrations of Rh and Pd and the thickness of the RhPd layer were measured by PIXE and by RBS, respectively. Secondly, the total sputtering yield was measured by ToF-SIMS for different cesium beam concentrations, varying from a pure xenon beam to a pure cesium beam. The sputtering yield was found to decrease linearly with cesium beam concentration, from 4.6 atoms/ion for the pure xenon to 4.0 atoms/ion for the pure cesium. The positive signals were then monitored with respect to the cesium surface concentration. As predicted by the tunneling model, the M signals decrease exponentially with the cesium surface concentration and the MCs yields exhibit a maximum for a well-defined Cs/Xe ratio.
Original languageEnglish
Pages (from-to)1654-1657
Number of pages4
JournalSurface and interface analysis
Volume38
Issue number12-13
DOIs
Publication statusPublished - 1 Dec 2006

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Cesium
Xenon
Secondary ion mass spectrometry
cesium
xenon
secondary ion mass spectrometry
Sputtering
sputtering
Thin films
thin films
Ions
Atoms
ions
molecular ions
Ionization
atoms
ionization

Cite this

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title = "An application of cesium-xenon co-sputtering: Quantitative study of a Pd-Rh thin film by ToF-SIMS",
abstract = "In this work, the ionization processes and the formation mechanisms of monoatomic and molecular ions were studied by co-sputtering cesium and xenon on a RhPd layer. Firstly, the relative concentrations of Rh and Pd and the thickness of the RhPd layer were measured by PIXE and by RBS, respectively. Secondly, the total sputtering yield was measured by ToF-SIMS for different cesium beam concentrations, varying from a pure xenon beam to a pure cesium beam. The sputtering yield was found to decrease linearly with cesium beam concentration, from 4.6 atoms/ion for the pure xenon to 4.0 atoms/ion for the pure cesium. The positive signals were then monitored with respect to the cesium surface concentration. As predicted by the tunneling model, the M signals decrease exponentially with the cesium surface concentration and the MCs yields exhibit a maximum for a well-defined Cs/Xe ratio.",
author = "J. Brison and R. Hubert and S. Lucas and L. Houssiau",
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TY - JOUR

T1 - An application of cesium-xenon co-sputtering

T2 - Quantitative study of a Pd-Rh thin film by ToF-SIMS

AU - Brison, J.

AU - Hubert, R.

AU - Lucas, S.

AU - Houssiau, L.

PY - 2006/12/1

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N2 - In this work, the ionization processes and the formation mechanisms of monoatomic and molecular ions were studied by co-sputtering cesium and xenon on a RhPd layer. Firstly, the relative concentrations of Rh and Pd and the thickness of the RhPd layer were measured by PIXE and by RBS, respectively. Secondly, the total sputtering yield was measured by ToF-SIMS for different cesium beam concentrations, varying from a pure xenon beam to a pure cesium beam. The sputtering yield was found to decrease linearly with cesium beam concentration, from 4.6 atoms/ion for the pure xenon to 4.0 atoms/ion for the pure cesium. The positive signals were then monitored with respect to the cesium surface concentration. As predicted by the tunneling model, the M signals decrease exponentially with the cesium surface concentration and the MCs yields exhibit a maximum for a well-defined Cs/Xe ratio.

AB - In this work, the ionization processes and the formation mechanisms of monoatomic and molecular ions were studied by co-sputtering cesium and xenon on a RhPd layer. Firstly, the relative concentrations of Rh and Pd and the thickness of the RhPd layer were measured by PIXE and by RBS, respectively. Secondly, the total sputtering yield was measured by ToF-SIMS for different cesium beam concentrations, varying from a pure xenon beam to a pure cesium beam. The sputtering yield was found to decrease linearly with cesium beam concentration, from 4.6 atoms/ion for the pure xenon to 4.0 atoms/ion for the pure cesium. The positive signals were then monitored with respect to the cesium surface concentration. As predicted by the tunneling model, the M signals decrease exponentially with the cesium surface concentration and the MCs yields exhibit a maximum for a well-defined Cs/Xe ratio.

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