Abstract
The determination of the composition of thin (1.5–3 nm) high-k layers ZrO2/Al2O3 becomes more and more important in microelectronics. High resolution Rutherford backscattering spectrometry and high resolution elastic recoil detection can achieve depth resolutions down to 1 nm while Rutherford backscattering spectrometry and nuclear reaction analysis are perfectly suited to quantify the zirconium, the oxygen and the aluminum content. The goal of this paper is to investigate the use of nuclear techniques for the characterization of thin high-k materials.
Original language | English |
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Pages (from-to) | 505-509 |
Number of pages | 5 |
Journal | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
Volume | 190 |
DOIs | |
Publication status | Published - 2002 |
Keywords
- Nuclear reaction analysis
- Thin film
- High-k
- Elastic recoil detection
- Rutherford backscattering