TY - JOUR
T1 - A new fabrication method for elevated source/drain junctionless transistors
AU - Tang, X.
AU - Raskin, Jean-Pierre
AU - Reckinger, N.
AU - Dai, B.
AU - Francis, L.A.
PY - 2013/4/24
Y1 - 2013/4/24
N2 - This paper presents a new, simple and low-cost fabrication method for junctionless transistors. Based on the dopant-assisted etching and oxidation effects, the proposed technique generates a monolithic elevated source/drain (S/D) structure without the addition of any elevation or recession process. More importantly, only one unique implantation creates heavily doped S/D regions and moderately doped channel. The former allows high current flow when the transistor is turned on and the latter ensures full depletion of carriers when the transistor is turned off. The elevation height of S/D regions can be accurately adjusted by the doping energy. The fabricated junctionless transistor with a 130 nm long gate, in which the S/D regions are elevated by 120 nm relatively to the channel, shows impressive performance with an I /I ratio exceeding 10 at V = 1 V and V = 3 V.
AB - This paper presents a new, simple and low-cost fabrication method for junctionless transistors. Based on the dopant-assisted etching and oxidation effects, the proposed technique generates a monolithic elevated source/drain (S/D) structure without the addition of any elevation or recession process. More importantly, only one unique implantation creates heavily doped S/D regions and moderately doped channel. The former allows high current flow when the transistor is turned on and the latter ensures full depletion of carriers when the transistor is turned off. The elevation height of S/D regions can be accurately adjusted by the doping energy. The fabricated junctionless transistor with a 130 nm long gate, in which the S/D regions are elevated by 120 nm relatively to the channel, shows impressive performance with an I /I ratio exceeding 10 at V = 1 V and V = 3 V.
UR - http://www.scopus.com/inward/record.url?scp=84875839460&partnerID=8YFLogxK
U2 - 10.1088/0022-3727/46/16/165101
DO - 10.1088/0022-3727/46/16/165101
M3 - Article
AN - SCOPUS:84875839460
SN - 0022-3727
VL - 46
JO - Journal of Physics D: Applied Physics
JF - Journal of Physics D: Applied Physics
IS - 16
ER -