A Monte Carlo investigation of carrier transport in fabricated back-to-back Schottky diodes: Influence of direct quantum tunnelling and temperature

E. Pascual, R. Rengel, N. Reckinger, X. Tang, V. Bayot, E. Dubois, M.J. Martín

    Research output: Contribution to journalMeeting abstractpeer-review

    Abstract

    In this paper we present a Monte Carlo investigation of charge transport -including quantum tunnelling effects in fabricated back-to-back n-type Schottky barriers in the reverse bias regime. The effect of the variation of the temperature over the current density and over different internal magnitudes like carrier density, electric field, etc. together with velocity distribution functions and the density of scattering mechanisms has been analyzed. The study of transport in the space charge region evidences important quasi-ballistic characteristics, thus becoming an important issue to be tackled in the modelling of Schottky-based devices with reverse biased junctions.
    Original languageEnglish
    Pages (from-to)119-122
    Number of pages4
    JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
    Volume5
    Issue number1
    DOIs
    Publication statusPublished - 1 Jan 2008

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