TY - GEN
T1 - A Monte Carlo investigation of carrier transport in fabricated back-to-back Schottky diodes
T2 - Influence of direct quantum tunnelling and temperature
AU - Pascual, E.
AU - Rengel, R.
AU - Reckinger, N.
AU - Tang, X.
AU - Bayot, V.
AU - Dubois, E.
AU - Martín, M.J.
PY - 2008/1/1
Y1 - 2008/1/1
N2 - In this paper we present a Monte Carlo investigation of charge transport -including quantum tunnelling effects in fabricated back-to-back n-type Schottky barriers in the reverse bias regime. The effect of the variation of the temperature over the current density and over different internal magnitudes like carrier density, electric field, etc. together with velocity distribution functions and the density of scattering mechanisms has been analyzed. The study of transport in the space charge region evidences important quasi-ballistic characteristics, thus becoming an important issue to be tackled in the modelling of Schottky-based devices with reverse biased junctions. © 2008 WILEY-VCH Verlag GmbH & Co. KGaA.
AB - In this paper we present a Monte Carlo investigation of charge transport -including quantum tunnelling effects in fabricated back-to-back n-type Schottky barriers in the reverse bias regime. The effect of the variation of the temperature over the current density and over different internal magnitudes like carrier density, electric field, etc. together with velocity distribution functions and the density of scattering mechanisms has been analyzed. The study of transport in the space charge region evidences important quasi-ballistic characteristics, thus becoming an important issue to be tackled in the modelling of Schottky-based devices with reverse biased junctions. © 2008 WILEY-VCH Verlag GmbH & Co. KGaA.
UR - http://www.scopus.com/inward/record.url?scp=45749133795&partnerID=8YFLogxK
U2 - 10.1002/pssc.200776519
DO - 10.1002/pssc.200776519
M3 - Conference contribution
VL - 5
SP - 119
EP - 122
BT - Physica Status Solidi (C) Current Topics in Solid State Physics
ER -