A Monte Carlo investigation of carrier transport in fabricated back-to-back Schottky diodes: Influence of direct quantum tunnelling and temperature

E. Pascual, R. Rengel, N. Reckinger, X. Tang, V. Bayot, E. Dubois, M.J. Martín

    Research output: Contribution in Book/Catalog/Report/Conference proceedingConference contribution

    Abstract

    In this paper we present a Monte Carlo investigation of charge transport -including quantum tunnelling effects in fabricated back-to-back n-type Schottky barriers in the reverse bias regime. The effect of the variation of the temperature over the current density and over different internal magnitudes like carrier density, electric field, etc. together with velocity distribution functions and the density of scattering mechanisms has been analyzed. The study of transport in the space charge region evidences important quasi-ballistic characteristics, thus becoming an important issue to be tackled in the modelling of Schottky-based devices with reverse biased junctions. © 2008 WILEY-VCH Verlag GmbH & Co. KGaA.
    Original languageEnglish
    Title of host publicationPhysica Status Solidi (C) Current Topics in Solid State Physics
    Pages119-122
    Number of pages4
    Volume5
    DOIs
    Publication statusPublished - 1 Jan 2008

    Fingerprint

    Dive into the research topics of 'A Monte Carlo investigation of carrier transport in fabricated back-to-back Schottky diodes: Influence of direct quantum tunnelling and temperature'. Together they form a unique fingerprint.

    Cite this