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Fabrication of competitive solar cells based on nano-textured ultrathin silicon technology is challenging nowadays. Attention is paid to the optimization of this type of texture, with a lot of simulation and experimental results published in the last few years. While previous studies discussed mainly the local features of the surface texture, we highlight here the importance of their filling fraction. In this work, we focus on a fair comparison between a technologically realizable correlated disorder pattern of inverted nano-pyramids on an ultrathin crystalline-silicon layer, and its periodically patterned counterpart. A fair comparison is made possible by defining an equivalent periodic structure for each hole filling fraction. Moreover, in order to be as realistic as possible, we consider patterns that could be fabricated by standard patterning techniques: hole-mask colloidal lithography, nanoimprint lithography and wet chemical etching. Based on numerical simulations, we show that inverted nano-pyramid patterns with correlated disorder provide typically greater efficiency than their periodic counterparts. However, the hole filling fraction of the etched pattern plays a crucial role and may limit the benefits of the correlated disorder due to experimental restrictions on pattern fabrication.