Filaments in organic and hybrid resistive memories are studied by combining advanced characterization techniques. Model ITO/polymer/Ag devices based on a cross-linked polystyrene layer, are investigated with XPS and ToF-SIMS depth profile analysis to provide a quantitative 3D spectroscopy showing conductive filaments forming between the two metal electrodes. Filament formation mechanisms are discussed by comparing ToF-SIMS reconstructions from pristine and electrically operated devices and by analyzing the drift and diffusion of metal cluster by cross-sectional STEM. Filaments are shown to form by the drift of silver from tips like structures which are formed during the top electrode deposition and the counter drift of indium from the ITO. The switching mechanism is interpreted in terms of reversible activation/inactivation of the same conductive path.
|Number of pages||6|
|Journal||Organic Electronics: physics, materials, applications|
|Publication status||Published - 6 Nov 2014|
- Organic electronics
- Organic memory devices
- Resistive switching
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Synthesis, Irradiation and Analysis of Materials (SIAM)
Pierre Louette (Manager), Julien Colaux (Manager), Alexandre Felten (Manager) & Jorge Humberto Mejia Mendoza (Manager)Technological Platform Synthesis, Irradiation and Analysis of Materials
Facility/equipment: Technological Platform