3D imaging of filaments in organic resistive memory devices

Yan Busby; Nicolas Crespo-Monteiro; Maria Girleanu; Martin Brinkmann; Ovidiu Ersen; Jean Jacques Pireaux

doi:10.1016/j.orgel.2014.10.039

3D imaging of filaments in organic resistive memory devices

Yan Busby, Nicolas Crespo-Monteiro, Maria Girleanu, Martin Brinkmann, Ovidiu Ersen, Jean Jacques Pireaux

Research output: Contribution to journal › Article › peer-review

Abstract

Filaments in organic and hybrid resistive memories are studied by combining advanced characterization techniques. Model ITO/polymer/Ag devices based on a cross-linked polystyrene layer, are investigated with XPS and ToF-SIMS depth profile analysis to provide a quantitative 3D spectroscopy showing conductive filaments forming between the two metal electrodes. Filament formation mechanisms are discussed by comparing ToF-SIMS reconstructions from pristine and electrically operated devices and by analyzing the drift and diffusion of metal cluster by cross-sectional STEM. Filaments are shown to form by the drift of silver from tips like structures which are formed during the top electrode deposition and the counter drift of indium from the ITO. The switching mechanism is interpreted in terms of reversible activation/inactivation of the same conductive path.

Original language	English
Pages (from-to)	40-45
Number of pages	6
Journal	Organic Electronics: physics, materials, applications
Volume	16
DOIs	https://doi.org/10.1016/j.orgel.2014.10.039
Publication status	Published - 6 Nov 2014

Keywords

Filaments
Organic electronics
Organic memory devices
Resistive switching
ToF-SIMS

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10.1016/j.orgel.2014.10.039

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@article{d13c077e8ea54de19c538b58859ee317,

title = "3D imaging of filaments in organic resistive memory devices",

abstract = "Filaments in organic and hybrid resistive memories are studied by combining advanced characterization techniques. Model ITO/polymer/Ag devices based on a cross-linked polystyrene layer, are investigated with XPS and ToF-SIMS depth profile analysis to provide a quantitative 3D spectroscopy showing conductive filaments forming between the two metal electrodes. Filament formation mechanisms are discussed by comparing ToF-SIMS reconstructions from pristine and electrically operated devices and by analyzing the drift and diffusion of metal cluster by cross-sectional STEM. Filaments are shown to form by the drift of silver from tips like structures which are formed during the top electrode deposition and the counter drift of indium from the ITO. The switching mechanism is interpreted in terms of reversible activation/inactivation of the same conductive path.",

keywords = "Filaments, Organic electronics, Organic memory devices, Resistive switching, ToF-SIMS",

author = "Yan Busby and Nicolas Crespo-Monteiro and Maria Girleanu and Martin Brinkmann and Ovidiu Ersen and Pireaux, {Jean Jacques}",

year = "2014",

month = nov,

day = "6",

doi = "10.1016/j.orgel.2014.10.039",

language = "English",

volume = "16",

pages = "40--45",

journal = "Organic Electronics: physics, materials, applications",

issn = "1566-1199",

publisher = "Elsevier",

}

TY - JOUR

T1 - 3D imaging of filaments in organic resistive memory devices

AU - Busby, Yan

AU - Crespo-Monteiro, Nicolas

AU - Girleanu, Maria

AU - Brinkmann, Martin

AU - Ersen, Ovidiu

AU - Pireaux, Jean Jacques

PY - 2014/11/6

Y1 - 2014/11/6

N2 - Filaments in organic and hybrid resistive memories are studied by combining advanced characterization techniques. Model ITO/polymer/Ag devices based on a cross-linked polystyrene layer, are investigated with XPS and ToF-SIMS depth profile analysis to provide a quantitative 3D spectroscopy showing conductive filaments forming between the two metal electrodes. Filament formation mechanisms are discussed by comparing ToF-SIMS reconstructions from pristine and electrically operated devices and by analyzing the drift and diffusion of metal cluster by cross-sectional STEM. Filaments are shown to form by the drift of silver from tips like structures which are formed during the top electrode deposition and the counter drift of indium from the ITO. The switching mechanism is interpreted in terms of reversible activation/inactivation of the same conductive path.

AB - Filaments in organic and hybrid resistive memories are studied by combining advanced characterization techniques. Model ITO/polymer/Ag devices based on a cross-linked polystyrene layer, are investigated with XPS and ToF-SIMS depth profile analysis to provide a quantitative 3D spectroscopy showing conductive filaments forming between the two metal electrodes. Filament formation mechanisms are discussed by comparing ToF-SIMS reconstructions from pristine and electrically operated devices and by analyzing the drift and diffusion of metal cluster by cross-sectional STEM. Filaments are shown to form by the drift of silver from tips like structures which are formed during the top electrode deposition and the counter drift of indium from the ITO. The switching mechanism is interpreted in terms of reversible activation/inactivation of the same conductive path.

KW - Filaments

KW - Organic electronics

KW - Organic memory devices

KW - Resistive switching

KW - ToF-SIMS

UR - http://www.scopus.com/inward/record.url?scp=84910001535&partnerID=8YFLogxK

U2 - 10.1016/j.orgel.2014.10.039

DO - 10.1016/j.orgel.2014.10.039

M3 - Article

AN - SCOPUS:84910001535

SN - 1566-1199

VL - 16

SP - 40

EP - 45

JO - Organic Electronics: physics, materials, applications

JF - Organic Electronics: physics, materials, applications

ER -

3D imaging of filaments in organic resistive memory devices

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Synthesis, Irradiation and Analysis of Materials (SIAM)

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3D imaging of filaments in organic resistive memory devices

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