The study of defects produced in alumina after Nitrogen and Neon implantation

Project: Research

Description

The relation between the energy deposited by N+ and Ne+ (50 keV) into monocrystalline alumina and the production of defects in the oxgyen or alumina networks can be determined by channeling Rutherford Backscattering (RBS-C) and TEM.
StatusFinished
Effective start/end date1/09/9131/08/02

Keywords

  • Neon
  • alumina
  • implantation
  • monocrystal
  • defects
  • channeling
  • Nitrogen