Study of the precursors of the growth of CdTe on Si. Experimental and theoretical approach of the Te/Si(100)-(2x1) and CdTe/As/Si(111)-(1x1) interfaces

Two growth precursor of the cadmium telluride were studied both experimentally and theoretically. The use of the scanning tunneling microscopy in conjunction with ab initio simulation techniques allowed us to suggest new structural models for the surfaces under study. The measured and computed electronic structures were directly compared.