Study of epitaxial selective growth of II-VI semiconductors on silicon

Project: PHD

Project Details


We will study the formation of the interface between II-VI semiconductors and silicon. The goal is eventually to grow self-assembled nanostructures of CdTe on silicon by selective epitaxy. Samples will be prepared by molecular beam epitaxy and analyzed by Photoelectron microscopy (PEEM) and scanning tunneling microscopy (STM).
Effective start/end date1/09/04 → …


  • MBE
  • semiconductor
  • PEEM
  • STM
  • silicon
  • CdTe


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