Project Details
Description
We will study the formation of the interface between II-VI semiconductors and silicon. The goal is eventually to grow self-assembled nanostructures of CdTe on silicon by selective epitaxy. Samples will be prepared by molecular beam epitaxy and analyzed by Photoelectron microscopy (PEEM) and scanning tunneling microscopy (STM).
| Status | Active |
|---|---|
| Effective start/end date | 1/09/04 → … |
Keywords
- MBE
- semiconductor
- PEEM
- STM
- silicon
- CdTe
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