Study of epitaxial selective growth of II-VI semiconductors on silicon

Project: PHD

Project Details

Description

We will study the formation of the interface between II-VI semiconductors and silicon. The goal is eventually to grow self-assembled nanostructures of CdTe on silicon by selective epitaxy. Samples will be prepared by molecular beam epitaxy and analyzed by Photoelectron microscopy (PEEM) and scanning tunneling microscopy (STM).
StatusActive
Effective start/end date1/09/04 → …

Keywords

  • MBE
  • semiconductor
  • PEEM
  • STM
  • silicon
  • CdTe