INIS
growth
100%
graphene
100%
boron nitrides
100%
devices
44%
substrates
44%
nucleation
33%
van der waals forces
22%
applications
11%
films
11%
chemical vapor deposition
11%
crystallography
11%
kinetics
11%
density
11%
molecular beam epitaxy
11%
spectroscopy
11%
simulation
11%
dielectric materials
11%
microelectronics
11%
resources
11%
monte carlo method
11%
Material Science
Graphene
100%
Heterojunction
100%
Boron Nitride
100%
Nucleation
33%
Two-Dimensional Material
22%
Electronic Property
11%
Dielectric Material
11%
Molecular Beam Epitaxy
11%
Chemical Vapor Deposition
11%
Morphology
11%
Film
11%
Spectroscopy Technique
11%
Density
11%
Theoretical Calculation
11%
Keyphrases
Scalable Growth
100%
2D Heterostructures
100%
Nitride Heterostructure
22%
Gate Dielectric Material
11%
Surrounding Materials
11%
Nucleation Centers
11%
Van Der Waals Systems
11%
Growth Optimal
11%