Fundamental study and modeling of the heteroepitaxial growth of dissimilar materials. Application to the growth of semiconductors, metals, insulators and superconductors on silicon

Project: Research

Project Details

Description

This project aims at improving the understanding of heteroepitaxial growth. The influence of the growth conditions and of the microscopic properties of the substrate surfaces on the electronic properties and on the atomic structure of the substrate/epilay
StatusFinished
Effective start/end date1/10/9229/02/00

Keywords

  • CdTe
  • atomic structure
  • interface formation
  • electronic structure
  • semiconductors
  • GaAs
  • epitaxy
  • silicon