Formation of semiconductor nanostructures by selective epitaxy: investigation by photoelectron microscopy, scanning tunneling microscopy and ab initio simulations

Project: Research

Project Details


Selective growth of II-VI semiconductors on silicon substrates will be studied. Samples are prepared by molecular beam epitaxy. Photoelectron microscopy (PEEM) and scanning tunneling microscopy (STM) will be used to analyze the samples. Theoretical modeling of the growth will be done by the PCPM group of the Universite Catholique de Louvain.
Effective start/end date1/01/0331/12/06


  • epitaxial growth
  • PEEM
  • Semiconductors
  • STM


Explore the research topics touched on by this project. These labels are generated based on the underlying awards/grants. Together they form a unique fingerprint.