Selective growth of II-VI semiconductors on silicon substrates will be studied. Samples are prepared by molecular beam epitaxy. Photoelectron microscopy (PEEM) and scanning tunneling microscopy (STM) will be used to analyze the samples. Theoretical modeling of the growth will be done by the PCPM group of the Universite Catholique de Louvain.
|Effective start/end date||1/01/03 → 31/12/06|
- epitaxial growth
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