Direct growth of graphitic carbon/graphene on Si(111) by using electron beam evaporation

Project: PHD

Project Details


Graphene has recently emerged as a promising material due to its outstanding electrical, optical, thermal, and mechanical properties. It opens new possibilities not only for fundamental physics research but also for industrial applications. Nowadays, since silicon is still the most important single-crystal substrate used for semiconductor devices and integrated circuits, integration of graphene into the current Si technology is highly desirable. A combination between graphene and silicon may overcome the traditional limitations in scaling down of devices that silicon-based technology is facing. Graphene on Si might be one of the most promising candidates as a material for graphene-based technology beyond CMOS. Therefore, it is crucial to nd a process to grow graphene directly on Si.

Key findings

amorphous carbon, graphitic carbon, graphene, Si(111), electron beam evaporation
Effective start/end date1/09/1130/10/15


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