Characterization of high-K ultrathin oxide layers

Project: Research

Description

the project aims to establish the methodologies for characterisation of high-k dielectrics for the future (sub-) 100 nm device technologies. The objectives include the fast and non-destructive analysis of single and multi-ellipsometry, X-ray reflectometry, angular resolved, XPS off-line tools with emphasis on the aspects related to quantification and depth resolution (attenuated IR ion mass techniques, ERD and ELS).
AcronymCUHKO
StatusFinished
Effective start/end date1/01/0231/12/04

Keywords

  • XPS
  • dielectric
  • TOF-SIMS
  • oxide ultra-thin layer