the project aims to establish the methodologies for characterisation of high-k dielectrics for the future (sub-) 100 nm device technologies. The objectives include the fast and non-destructive analysis of single and multi-ellipsometry, X-ray reflectometry, angular resolved, XPS off-line tools with emphasis on the aspects related to quantification and depth resolution (attenuated IR ion mass techniques, ERD and ELS).
|Effective start/end date||1/01/02 → 31/12/04|
- oxide ultra-thin layer
Explore the research topics touched on by this project. These labels are generated based on the underlying awards/grants. Together they form a unique fingerprint.