Project Details
Description
This project aims at understanding the formation of interfaces between dissimilar materials. Such interfaces will be produced with a thickness gradient and analyzed by scanning Auger microscopy. We shall start with the study of III-V nitride films and ext
| Status | Finished |
|---|---|
| Effective start/end date | 1/07/94 → 31/08/99 |
Keywords
- GaN
- interface formation
- electronic structure
- AlN
- BN
- nitrides
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