INIS
graphene
69%
devices
43%
layers
42%
fabrication
34%
barriers
27%
oxidation
25%
substrates
24%
silicon
23%
silicides
23%
films
23%
electrons
22%
annealing
21%
mosfet
19%
chemical vapor deposition
17%
optimization
17%
metals
16%
applications
16%
height
15%
memory devices
15%
copper
14%
growth
14%
gold
14%
surfaces
14%
oxygen
13%
arsenic
12%
temperature range 0273-0400 k
12%
ytterbium silicides
12%
erbium silicides
12%
nanowires
12%
thickness
11%
atoms
10%
simulation
10%
transistors
10%
energy
10%
charges
9%
fins
9%
polymers
9%
etching
8%
storage
8%
size
8%
erbium
7%
ultrahigh vacuum
7%
width
6%
length
6%
gases
6%
solids
6%
stacks
6%
photoemission
6%
coatings
6%
shielding
6%
Material Science
Graphene
100%
Oxidation Reaction
45%
Silicide
44%
Schottky Barrier
42%
Silicon
39%
Nanowires
34%
Chemical Vapor Deposition
29%
Erbium
21%
Annealing
19%
Transmission Electron Microscopy
17%
Few-Layer Graphene
16%
Arsenic
16%
Transistor
15%
Film
15%
Metal-Oxide-Semiconductor Field-Effect Transistor
13%
Crystalline Material
12%
Nanocrystalline Material
11%
Ytterbium
11%
Process Simulation
9%
Charge Trapping
9%
Two-Dimensional Material
9%
Density
9%
Dielectric Material
8%
Raman Spectroscopy
6%
Thin Films
6%
Oxide Compound
6%
Electronic Circuit
5%
Heterojunction
5%
Doping (Additives)
5%
Keyphrases
Silicide
14%
Ytterbium
9%
Flash Memory
9%
Fin Field-effect Transistor (FinFET)
9%
Sub-10 Nm
9%
Nanogap
9%
Polysilicon
9%
TEM Characterization
9%
Fabrication Methods
7%
Silicidation
6%