INIS
diffusion
81%
germanium
81%
films
75%
nanocrystals
53%
silicon
53%
oxygen
50%
silicon oxides
46%
layers
35%
depth
33%
annealing
30%
ion implantation
30%
transmission electron microscopy
30%
atoms
29%
nitrogen 15
25%
oxygen 18
25%
barriers
25%
blocking
25%
atmospheres
21%
rutherford backscattering spectrometry
18%
nanostructures
17%
raman spectroscopy
16%
matrices
16%
substrates
16%
size
13%
defects
13%
alloys
12%
semiconductor materials
12%
charges
12%
dielectrics
12%
comparative evaluations
12%
energy
11%
germanium ions
11%
peaks
10%
mobility
9%
ions
9%
thermal diffusion
8%
oxidation
7%
surfaces
7%
rutherford backscattering spectroscopy
7%
x-ray diffraction
7%
x-ray photoelectron spectroscopy
7%
molecules
7%
stoichiometry
7%
concentration
6%
temperature range 0273-0400 k
6%
photovoltaic cells
6%
silicon 30
6%
ambient temperature
6%
xrd
6%
crystals
6%
Material Science
Germanium
100%
Silicon
53%
Film
50%
Annealing
38%
Nanocrystalline Material
36%
Silicon Dioxide
31%
Thermal Diffusion
27%
Raman Spectroscopy
20%
Oxidation Reaction
12%
Dielectric Films
10%
Diffusivity
8%
Film Growth
8%
Oxide Compound
8%
X-Ray Diffraction
7%
X-Ray Photoelectron Spectroscopy
7%
Density
6%
Transmission Electron Microscopy
5%
Monolayers
5%
Germanium Ion
5%
Point Defect
5%
Stacking Fault
5%
Nucleation
5%
Keyphrases
Germanium
25%
Nanoclustering
25%
Oxygen Influence
25%
Ge Nanocrystals
25%
Implanted Silicon
25%
Silicon Isotopes
25%
Isotope Tracing
25%
Silicon Dioxide
25%
Silica
12%
Local Atom
12%
Si1-xGex Alloy
12%
Dielectric Film
12%
Thermal Diffusion Coefficient
12%
Size Reduction
6%
Size Selectivity
6%
Crystallinity
6%
Ion Implantation
6%
Electron Energy
6%
Monte Carlo Calculation
6%
Ge Profile
6%
Semiconductor Nanocrystals
6%
Diffusion Barrier
6%
Substitutional Site
6%
Energy Dispersive X-ray Spectroscopy
6%
SiGe
6%
High-resolution Imaging
6%
Spatial Distribution
6%
Thermal Diffusion
6%
Spectroscopic Measurement
6%
Transmission Electron Microscopy
6%
Si Nanocrystals
6%
Thermal Annealing
6%
Nanostructured Systems
6%
Co-implantation
6%
Stacking Faults
6%
Outgassing
6%
Radiation Defects
5%
High-temperature Processes
5%
Peak Formation
5%
Three-process Model
5%